P. H. Jefferson

Bandgap and effective mass of epitaxial cadmium oxide

P. H. Jefferson, S. A. Hatfield, T. D. Veal et al. · Applied Physics Letters · 2008 · 178 citations · Full text

Materials Engineering, Materials Science, Semiconductors +14

Valence-band electronic structure of CdO, ZnO, and MgO from x-ray photoemission spectroscopy and quasi-particle-corrected density-functional theory calculations

P. D. C. King, T. D. Veal, André Schleife et al. · Physical Review B · 2009 · 142 citations

Valence-band Density, Engineering, Rock- Salt Mgo +16

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

P. D. C. King, T. D. Veal, P. H. Jefferson et al. · Physical Review B · 2008 · 112 citations

Engineering, Chemical Trends, Chemistry +18

Quantized Electron Accumulation States in Indium Nitride Studied by Angle-Resolved Photoemission Spectroscopy

Leyla Çolakerol Arslan, T. D. Veal, Hae‐Kyung Jeong et al. · Physical Review Letters · 2006 · 104 citations

Transition from electron accumulation to depletion at InGaN surfaces

T. D. Veal, P. H. Jefferson, Louis F. J. Piper et al. · Applied Physics Letters · 2006 · 98 citations · Full text

Wide-bandgap Semiconductor, Engineering, Fermi-level Pinning +16