Publication | Open Access
Bandgap and effective mass of epitaxial cadmium oxide
178
Citations
7
References
2008
Year
Materials EngineeringMaterials ScienceSemiconductorsOptical MaterialsBandgap RenormalizationEngineeringBand-edge Effective MassOptical PropertiesInfrared ReflectivityCrystal Growth TechnologyApplied PhysicsEffective MassSemiconductor MaterialChemistryMolecular Beam EpitaxyEpitaxial GrowthOptoelectronics
The bandgap and band-edge effective mass of single crystal cadmium oxide, epitaxially grown by metal-organic vapor-phase epitaxy, are determined from infrared reflectivity, ultraviolet/visible absorption, and Hall effect measurements. Analysis and simulation of the optical data, including effects of band nonparabolicity, Moss-Burstein band filling and bandgap renormalization, reveal room temperature bandgap and band-edge effective mass values of 2.16±0.02eV and 0.21±0.01m0 respectively.
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