S. A. Hatfield

Bandgap and effective mass of epitaxial cadmium oxide

P. H. Jefferson, S. A. Hatfield, T. D. Veal et al. · Applied Physics Letters · 2008 · 178 citations · Full text

Materials Engineering, Materials Science, Semiconductors +14

Determination of the branch-point energy of InN: Chemical trends in common-cation and common-anion semiconductors

P. D. C. King, T. D. Veal, P. H. Jefferson et al. · Physical Review B · 2008 · 112 citations

Engineering, Chemical Trends, Chemistry +18

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

T. D. Veal, P. D. C. King, S. A. Hatfield et al. · Applied Physics Letters · 2008 · 93 citations · Full text

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14

The influence of conduction band plasmons on core-level photoemission spectra of InN

P. D. C. King, T. D. Veal, H. J. Lü et al. · Surface Science · 2008 · 30 citations

Plasmonics, Photonics, Photoluminescence +7

Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering

P.D. Quinn, Neil R. Wilson, S. A. Hatfield et al. · Applied Physics Letters · 2005 · 22 citations · Full text

Semiconductors, Engineering, Physics +12