Publication | Open Access
Composition profiles of InAs–GaAs quantum dots determined by medium-energy ion scattering
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Citations
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References
2005
Year
SemiconductorsEngineeringPhysicsNanotechnologyComposition ProfilesApplied PhysicsQuantum DotsMedium-energy Ion ScatteringSemiconductor MaterialMedium-energy IonLinear ProfileComposition ProfileInas–gaas Quantum DotsCompound SemiconductorSemiconductor Nanostructures
The composition profile along the [001] growth direction of low-growth-rate InAs–GaAs quantum dots (QDs) has been determined using medium-energy ion scattering (MEIS). A linear profile of In concentration from 100% In at the top of the QDs to 20% at their base provides the best fit to MEIS energy spectra.
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