Hideto Miyake

Fabrication and characterization of low defect density GaN using facet-controlled epitaxial lateral overgrowth (FACELO)

Kazumasa Hiramatsu, K. Nishiyama, Masaru Onishi et al. · Journal of Crystal Growth · 2000 · 410 citations

Materials Engineering, Semiconductor Technology, Electrical Engineering +5

Preparation of high-quality AlN on sapphire by high-temperature face-to-face annealing

Hideto Miyake, Chia‐Hung Lin, Kenta Tokoro et al. · Journal of Crystal Growth · 2016 · 311 citations · Full text

Recent Progress in Selective Area Growth and Epitaxial Lateral Overgrowth of III-Nitrides: Effects of Reactor Pressure in MOVPE Growth

K. Hiramatsu, K. Nishiyama, Atsushi Motogaito et al. · physica status solidi (a) · 1999 · 283 citations

Materials Science, Epitaxial Growth, Elo Gan +14

AlGaN-based deep UV LEDs grown on sputtered and high temperature annealed AlN/sapphire

Norman Susilo, Sylvia Hagedorn, Dominik Jaeger et al. · Applied Physics Letters · 2018 · 198 citations

Aln/sapphire Templates, Aluminium Nitride, Optical Materials +16

Annealing of an AlN buffer layer in N₂–CO for growth of a high-quality AlN film on sapphire

Hideto Miyake, Gou Nishio, Shuhei Suzuki et al. · Applied Physics Express · 2016 · 191 citations · Full text

Aluminium Nitride, Engineering, Crystal Growth Technology +16