InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Abstract

InGaN multi-quantum-well-structure laser diodes with Al 0.14 Ga 0.86 N/GaN modulation doped strained-layer superlattice cladding layers grown on an epitaxially laterally overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 h under continuous-wave operation at 20° C. Under operation at a high temperature of 50° C, the lifetime was longer than 1000 h. With the operating current increasing to above the threshold, a self-pulsation with a high frequency of 3.5 GHz was observed. The carrier lifetime was estimated to be 1.8 ns from the pulsed modulation of the LDs.