Publication | Closed Access
Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxy
316
Citations
12
References
1994
Year
Materials ScienceMaterials EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceSelective GrowthWurtzite GanGan/sapphire Substrates
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