New GaAs quantum wires on {111}B facets by selective MOCVD

Abstract

New GaAs quantum wires are fabricated on {111}B crystallographic facets by selective area growth using metalorganic chemical vapour deposition (MOCVD). Facet formation is simply controlled by MOCVD growth conditions. The existence of 2DEG on {111}B facets is confirmed by Shubnikovde Haas oscillations. These techniques can control channel widths as narrow as 10 nm by adjusting the GaAs thickness.