A. Reiher

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 138 citations

Electrical Engineering, Engineering, Applied Physics +2

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 128 citations

Materials Science, Materials Engineering, Wide-bandgap Semiconductor +15

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

A. Dadgar, A. Strittmatter, J. Bläsing et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 128 citations

Materials Science, Semiconductors, Electrical Engineering +12

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

A. Reiher, J. Bläsing, A. Dadgar et al. · Journal of Crystal Growth · 2002 · 117 citations

Materials Science, Materials Engineering, Electrical Engineering +10

Reduction of stress at the initial stages of GaN growth on Si(111)

A. Dadgar, M. Poschenrieder, A. Reiher et al. · Applied Physics Letters · 2003 · 103 citations

Materials Engineering, Semiconductors, Electrical Engineering +12