A. Reiher

MOVPE growth of GaN on Si(111) substrates

A. Dadgar, M. Poschenrieder, J. Bläsing et al. · Journal of Crystal Growth · 2002 · 139 citations

Engineering, Materials Engineering, Materials Science +12

The origin of stress reduction by low-temperature AlN interlayers

J. Bläsing, A. Reiher, A. Dadgar et al. · Applied Physics Letters · 2002 · 129 citations

Engineering, Materials Engineering, Materials Science +17

Metalorganic chemical vapor phase epitaxy of gallium‐nitride on silicon

A. Dadgar, A. Strittmatter, J. Bläsing et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 128 citations

Engineering, Materials Engineering, Materials Science +17

Efficient stress relief in GaN heteroepitaxy on Si(111) using low-temperature AlN interlayers

A. Reiher, J. Bläsing, A. Dadgar et al. · Journal of Crystal Growth · 2002 · 119 citations

Engineering, Materials Engineering, Materials Science +16

Reduction of stress at the initial stages of GaN growth on Si(111)

A. Dadgar, M. Poschenrieder, A. Reiher et al. · Applied Physics Letters · 2003 · 104 citations

Engineering, Materials Engineering, Materials Science +17