D. Y. Song

Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia

B. Borisov, V. Kuryatkov, Yu. A. Kudryavtsev et al. · Applied Physics Letters · 2005 · 92 citations

Materials Science, Semiconductors, Materials Engineering +14

The influence of phonons on the optical properties of GaN

D. Y. Song, Madivala G. Basavaraj, S. A. Nikishin et al. · Journal of Applied Physics · 2006 · 55 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +14

Self-heating in a GaN based heterostructure field effect transistor: Ultraviolet and visible Raman measurements and simulations

Iftikhar Ahmad, Vijay Kasisomayajula, D. Y. Song et al. · Journal of Applied Physics · 2006 · 42 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +10

Optical phonon decay in bulk aluminum nitride

D. Y. Song, M. Holtz, A. Chandolu et al. · Applied Physics Letters · 2006 · 35 citations · Full text

Materials Science, Aluminium Nitride, Optical Materials +14

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

Wen Feng, V. Kuryatkov, A. Chandolu et al. · Journal of Applied Physics · 2008 · 33 citations

Optical Materials, Engineering, Optoelectronic Devices +20