Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia

Abstract

Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation B. Borisov, V. Kuryatkov, Yu. Kudryavtsev, R. Asomoza, S. Nikishin, D. Y. Song, M. Holtz, H. Temkin; Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia. Appl. Phys. Lett. 26 September 2005; 87 (13): 132106. https://doi.org/10.1063/1.2061856 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search