B. Borisov

Si-doped AlxGa1−xN(0.56⩽×⩽1) layers grown by molecular beam epitaxy with ammonia

B. Borisov, V. Kuryatkov, Yu. A. Kudryavtsev et al. · Applied Physics Letters · 2005 · 96 citations

Engineering, Materials Engineering, Materials Science +11

The growth rate evolution versus substrate temperature and V/III ratio during GaN MBE using ammonia

A. N. Alexeev, B. Borisov, V. P. Chaly et al. · MRS Internet Journal of Nitride Semiconductor Research · 1999 · 81 citations · Full text

Engineering, Materials Engineering, Materials Science +17

AlN/AlGaInN superlattice light-emitting diodes at 280 nm

G. Kipshidze, V. Kuryatkov, Kaiyu Zhu et al. · Journal of Applied Physics · 2003 · 80 citations · Full text

Engineering, Materials Engineering, Materials Science +17

AlGaInN-based ultraviolet light-emitting diodes grown on Si(111)

G. Kipshidze, V. Kuryatkov, B. Borisov et al. · Applied Physics Letters · 2002 · 70 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Evolution of surface roughness of AlN and GaN induced by inductively coupled Cl2/Ar plasma etching

Kaiyu Zhu, V. Kuryatkov, B. Borisov et al. · Journal of Applied Physics · 2004 · 57 citations · Full text

Natural Sciences, Materials Science, Physics +16