Wen Feng

Green light emission from InGaN multiple quantum wells grown on GaN pyramidal stripes using selective area epitaxy

Wen Feng, V. Kuryatkov, A. Chandolu et al. · Journal of Applied Physics · 2008 · 33 citations

Optical Materials, Engineering, Optoelectronic Devices +20

The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Tae‐Sik Yoon, Wen Feng, Bairu Li et al. · Thin Solid Films · 2005 · 20 citations

Materials Science, Guided Self-assembly, Engineering +11

Pressure dependence of the intersubband transition in strained In0.15Ga0.85As/GaAs multiple quantum wells

W. Shan, Xiao‐Xu Fang, Dunhai Li et al. · Applied Physics Letters · 1990 · 16 citations

Wide-bandgap Semiconductor, Ii-vi Semiconductor, Pressure Dependence +12

Photocurrent spectroscopy of strained-layer InGaAsGaAs multiple quantum wells

Xiao‐Xu Fang, Xingqiu Shen, Hong‐Wei Hou et al. · Surface Science · 1990 · 14 citations

Influence of sintering necks on the spectral behaviour of ITO clusters using the Discrete Dipole Approximation

Krzysztof Skorupski, Jens Hellmers, Wen Feng et al. · Journal of Quantitative Spectroscopy and Radiative Transfer · 2015 · 14 citations

Materials Engineering, Materials Science, Cluster Science +8