Concepedia

V. I. Vdovin

VI

Statistics

Publications

30

Citations

837

H-Index

16

Active since

1985

Affiliations

Institute for Design Problems in Microelectronics(Current)

Ural Institute of Metals

Institute of Semiconductor Physics

Russian Academy of Sciences

Novosibirsk State University

V. I. Vdovin is an author at Institute for Design Problems in Microelectronics specializing in applied physics, engineering, and materials science.

Top concepts

EngineeringApplied PhysicsMaterial ScienceOptoelectronicsElectrical EngineeringPhysicsSurface ScienceMaterials EngineeringMicroelectronicsCondensed Matter Physics

Publications per year

1985–2019

30

Publications

30

Electrical characteristics of Au and Ag Schottky contacts on n-ZnO

A. Y. Polyakov, N. B. Smirnov, V. I. Vdovin et al. · Applied Physics Letters · 2003 · 187 citations

Materials Science, Ii-vi Semiconductor, Electrical Engineering +14

Proton implantation effects on electrical and recombination properties of undoped ZnO

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 2003 · 80 citations

Materials Science, Semiconductor Technology, Electrical Engineering +14

Fluorinated graphene dielectric films obtained from functionalized graphene suspension: preparation and properties

Nadezhda A. Nebogatikova, I. V. Antonova, V. Ya. Prinz et al. · Physical Chemistry Chemical Physics · 2015 · 60 citations

Misfit Dislocations in Epitaxial Heterostructures: Mechanisms of Generation and Multiplication

V. I. Vdovin · physica status solidi (a) · 1999 · 49 citations

Dislocation Nucleation, Engineering, Severe Plastic Deformation +16

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

O. B. Gusev, E. I. Shek, V. I. Vdovin et al. · Applied Physics Letters · 1998 · 35 citations

Optical Materials, Engineering, Erbium-implanted Silicon +18

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