Institute of Semiconductor Physics

Low dielectric constant materials for microelectronics

Karen Maex, Mikhaı̈l R. Baklanov, Denis Shamiryan et al. · Journal of Applied Physics · 2003 · 1.6K citations

Dielectrics, Engineering, Electrical Performance +16

Free-standing and overgrown InGaAs/GaAs nanotubes, nanohelices and their arrays

V. Ya. Prinz, V. A. Seleznev, A.K. Gutakovsky et al. · Physica E Low-dimensional Systems and Nanostructures · 2000 · 748 citations

Electrical Engineering, Engineering, Nanotechnology +6

Determination of pore size distribution in thin films by ellipsometric porosimetry

Mikhaı̈l R. Baklanov, K. P. Mogilnikov, V. G. Polovinkin et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2000 · 508 citations

Materials Science, Pore Size Distribution, Chemical Engineering +14

Transformations on clean Si(111) stepped surface during sublimation

A. L. Aseev, A.B. Krasilnikov, S. I. Stenin · Surface Science · 1989 · 436 citations

Engineering, Surface Analysis, Surface Science +4

Structural and Luminescence Properties of Yellow-Emitting NaScSi₂O₆:Eu²⁺ Phosphors: Eu²⁺ Site Preference Analysis and Generation of Red Emission by Codoping Mn²⁺ for White-Light-Emitting Diode Applications

Zhiguo Xia, Yuanyuan Zhang, Victor V. Atuchin∥⊥ · The Journal of Physical Chemistry C · 2013 · 419 citations

Engineering, White-light-emitting Diode Applications, Inorganic Photochemistry +23