E. I. Shek - Concepedia

Author

E. I. Shek

Physico-Technical Institute

Also Known As

E I Shek, E. I. Shek, E.I Shek, E.I. Shek, Elena I. Shek, Shek E. I., V.V Emtsev, Е.И. Шек

Publications

398

Citations

H-Index

Concepts

All Affiliations

Physico-Technical Institute Institute for Design Problems in Microelectronics Russian Academy of Sciences

About

E. I. Shek is an author at Physico-Technical Institute specializing in applied physics, optoelectronics, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	5	5	98
2	Applied Physics	5	5	98
3	Electrical Engineering	3	3	48
4	Materials Science	2	2	47
5	Physics	1	1	15

E. I. Shek

Publications

179

Citations

H-Index

Page 1

	Year	Citations
Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature O. B. Gusev, E. I. Shek, V. I. Vdovin, Applied Physics Letters Optical MaterialsEngineeringErbium-implanted SiliconOptoelectronic DevicesSilicon On Insulator	1998	35
Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon A. O. Zakhar’in, E. I. Shek, M. I. Makoviichuk, Semiconductors	1998	32
Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes A. M. Emel’yanov, E. I. Shek, V. I. Vdovin Physica B Condensed Matter Electrical EngineeringSolid-state LightingExtended Structural DefectsEngineeringPhotoluminescence	2003	21
Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes A. M. Emel’yanov, E. I. Shek, V. I. Vdovin Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena White OledElectrical EngineeringSolid-state LightingExtended Structural DefectsEngineering	2003	15
Dislocation-related luminescence in Er-implanted silicon O. B. Gusev, E. I. Shek, V. I. Vdovin, Journal of Luminescence Dislocation-related LuminescencePhotoluminescenceEngineeringDislocation InteractionPhysics	1998	15
Silicon LEDs emitting in the band-to-band transition region: Effect of temperature and current strength A. M. Emel’yanov, E. I. Shek Physics of the Solid State	2004	14
Dislocation-related luminescence in single-crystal silicon subjected to silicon ion implantation and subsequent annealing A. M. Emel’yanov, I. T. Serenkov, E. I. Shek, Semiconductors	2007	14
Influence of the deformation on the luminescence properties of Si light‐emitting diodes A. M. Emel’yanov, E. I. Shek, O. V. Feklisova, Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics EngineeringOptoelectronic DevicesLuminescence PropertySemiconductorsLuminescence Properties	2005	12
Si:Si LEDs with room-temperature dislocation-related luminescence A. E. Kalyadin, M. V. Konovalov, V. V. Zabrodskiy, Semiconductors	2016	11
Effect of the postimplantation-annealing temperature on the properties of silicon light-emitting diodes fabricated through boron ion implantation into n-Si A. M. Emel’yanov, E. I. Shek, V. I. Vdovin Physics of the Solid State	2004	10

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