E. I. Shek

Photoluminescence and structural defects in erbium-implanted silicon annealed at high temperature

O. B. Gusev, E. I. Shek, V. I. Vdovin et al. · Applied Physics Letters · 1998 · 35 citations

Optical Materials, Engineering, Erbium-implanted Silicon +18

Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

A. O. Zakhar’in, E. I. Shek, M. I. Makoviichuk et al. · Semiconductors · 1998 · 32 citations

Extended structural defects and their influence on the electroluminescence in efficient Si light-emitting diodes

A. M. Emel’yanov, E. I. Shek, V. I. Vdovin · Physica B Condensed Matter · 2003 · 21 citations

Electrical Engineering, Solid-state Lighting, Extended Structural Defects +7

Influence of Extended Structural Defects on the Characteristics of Electroluminescence in Efficient Silicon Light-Emitting Diodes

A. M. Emel’yanov, E. I. Shek, V. I. Vdovin · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2003 · 15 citations

White Oled, Electrical Engineering, Solid-state Lighting +8

Dislocation-related luminescence in Er-implanted silicon

O. B. Gusev, E. I. Shek, V. I. Vdovin et al. · Journal of Luminescence · 1998 · 15 citations

Dislocation-related Luminescence, Photoluminescence, Engineering +5