Formation of donor centers upon annealing of dysprosium-and holmium-implanted silicon

Abstract

The implantation of a 1013 cm−2 dose of 1-MeV dysprosium and holmium ions with subsequent annealing at temperatures in the range 600–900 °C leads to donor center formation. The donor center concentration increases with increasing oxygen concentration in the starting materials as well as upon additional oxygen implantation. Such behavior of the activation and the donor center concentration profiles as a function of the annealing temperature and oxygen concentration is observed in Si:Dy and Si:Ho. The results show that the formation of at least two types of donor centers containing rare-earth elements and/or oxygen atoms takes place.