A. V. Govorkov - Concepedia

Author

A. V. Govorkov

Ural Institute of Metals

Also Known As

A. V. GOVORKOV, A. V. Govorkov, A.V Govorkov, A.V. Govorkov, Anatolyi V. Govorkov

Publications

672

Citations

H-Index

Concepts

All Affiliations

Ural Institute of Metals University of Florida Jeonbuk National University SVT Associates (United States)National University of Science and Technology

About

A. V. Govorkov is an author at Ural Institute of Metals specializing in applied physics, electrical engineering, and engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	16	20	587
2	Engineering	15	19	570
3	Electrical Engineering	15	17	531
4	Materials Engineering	2	2	45
5	Natural Sciences	1	1	41

A. V. Govorkov

Publications

587

Citations

H-Index

Page 1

	Year	Citations
Proton implantation effects on electrical and recombination properties of undoped ZnO A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics Materials ScienceSemiconductor TechnologyElectrical EngineeringWide-bandgap SemiconductorEngineering	2003	80
Electrical and optical properties of Fe-doped semi-insulating GaN templates A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Applied Physics Letters SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2003	60
Deep traps responsible for hysteresis in capacitance-voltage characteristics of AlGaN∕GaN heterostructure transistors A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Applied Physics Letters Device ModelingSemiconductorsElectrical EngineeringElectronic DevicesGan Buffers	2007	55
Enhanced tunneling in GaN/InGaN multi-quantum-well heterojunction diodes after short-term injection annealing A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineering	2002	44
Fermi level pinning in heavily neutron-irradiated GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorElectrical EngineeringEngineeringNuclear Physics	2006	41
Influence of high-temperature annealing on the properties of Fe doped semi-insulating GaN structures A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics Materials EngineeringMaterials ScienceElectrical EngineeringSemiconductorsEngineering	2004	31
Properties of Mn- and Co-doped bulk ZnO crystals A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena Materials ScienceOptical MaterialsOptical Absorption BandsEngineeringPhotoluminescence	2005	29
Properties of Fe-doped semi-insulating GaN structures A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsSemiconductor TechnologyElectrical EngineeringElectronic DevicesEngineering	2004	27
Electrical properties and deep traps spectra of a-plane GaN films grown on r-plane sapphire A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Materials Science and Engineering B Wide-bandgap SemiconductorElectrical EngineeringDeep Traps SpectraEngineeringPhysics	2009	26
Electrical and structural properties of GaN films and GaN/InGaN light-emitting diodes grown on porous GaN templates fabricated by combined electrochemical and photoelectrochemical etching Lee‐Woon Jang, Dae‐Woo Jeon, A. Y. Polyakov, Journal of Alloys and Compounds Wide-bandgap SemiconductorElectrical EngineeringGan/ingan Light-emitting DiodesEngineeringApplied Physics	2013	26

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