A. V. Govorkov

Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 1998 · 106 citations

Semiconductors, Wide-bandgap Semiconductor, Semiconductor Technology +15

Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films

A. Y. Polyakov, N. B. Smirnov, A. S. Usikov et al. · Solid-State Electronics · 1998 · 105 citations

Photoluminescence, Engineering, Physics +8

Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage

A. P. Zhang, J. W. Johnson, F. Ren et al. · Applied Physics Letters · 2001 · 92 citations

Wide-bandgap Semiconductor, Semiconductor Technology, Electrical Engineering +9

Properties of Si donors and persistent photoconductivity in AlGaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Solid-State Electronics · 1998 · 87 citations

Engineering, Si Donors, Applied Physics +3

Electrical and optical properties of Cr and Fe implanted <i>n</i>-GaN

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov et al. · Journal of Applied Physics · 2003 · 74 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13