A. V. Govorkov - Concepedia

Author

A. V. Govorkov

Ural Institute of Metals

Also Known As

A V Govorkov, A. V. Govorkov, A.V Govorkov, A.V. Govorkov, Anatoliy Govorkov, Anatoliy V Govorkov, Anatoliy V. Govorkov

146

Publications

2.9K

Citations

H-Index

Concepts

All Affiliations

Ural Institute of Metals University of Florida Jeonbuk National University Karpov Institute of Physical Chemistry United States Army Research Office

About

A. V. Govorkov is an author at Ural Institute of Metals specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	32	80	2.5K
2	Applied Physics	32	83	2.6K
3	Natural Sciences	5	5	156
4	Chemistry	5	5	196
5	Chemical Engineering	1	1	29

A. V. Govorkov

Publications

2.7K

Citations

H-Index

Page 1

	Year	Citations
Deep centers and their spatial distribution in undoped GaN films grown by organometallic vapor phase epitaxy A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyElectronic DevicesEngineering	1998	106
Studies of the origin of the yellow luminescence band, the nature of nonradiative recombination and the origin of persistent photoconductivity in n-GaN films A. Y. Polyakov, N. B. Smirnov, A. S. Usikov, Solid-State Electronics PhotoluminescenceEngineeringPhysicsOptical PropertiesYellow Luminescence Band	1998	105
Lateral AlxGa1−xN power rectifiers with 9.7 kV reverse breakdown voltage A. P. Zhang, J. W. Johnson, F. Ren, Applied Physics Letters Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringLateral Geometry	2001	92
Properties of Si donors and persistent photoconductivity in AlGaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Solid-State Electronics EngineeringSi DonorsApplied PhysicsAluminum Gallium NitrideCategoryiii-v Semiconductor	1998	87
Electrical and optical properties of Cr and Fe implanted <i>n</i>-GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics SemiconductorsSemiconductor TechnologyElectrical EngineeringOptical MaterialsDeep Levels	2003	74
Effects of proton implantation on electrical and recombination properties of n-GaN A. Y. Polyakov, A. S. Usikov, B. Theys, Solid-State Electronics Semiconductor TechnologyWide-bandgap SemiconductorElectrical EngineeringEngineeringProton Implantation	2000	68
Fast neutron irradiation effects in n-GaN A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena SemiconductorsWide-bandgap SemiconductorElectrical EngineeringSemiconductor TechnologyEngineering	2007	65
Deep traps in high resistivity AlGaN films A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Solid-State Electronics Aluminum Gallium NitrideApplied PhysicsPhysicsDeep Traps	1998	60
Optical and magnetic properties of ZnO bulk crystals implanted with Cr and Fe A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, Materials Science in Semiconductor Processing Materials EngineeringMagnetismFerromagnetismOptical MaterialsMagnetic Properties	2004	57
Hydrogen plasma treatment effects on electrical and optical properties of <i>n</i>-ZnO A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, Journal of Applied Physics Materials ScienceElectrical EngineeringOptical MaterialsPlasma ExposureHydrogen Penetration Depth	2003	57

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