Breakdown Mechanisms

Breakdown Mechanisms is a physical phenomenon characterized by the sudden loss of rectifying or insulating properties in a semiconductor device under high electric fields, distinguished within wide band gap materials by intrinsic avalanche, tunneling, or surface-related failure processes that limit operational voltage thresholds.

2.6K

Publications

116K

Citations

7.3K

Authors

1.4K

Institutions

Publications per year

2017–2026

377

Authors

7.3K

  1. JS
    J. Suñé

    Universitat Autònoma de Barcelona, Spain

    36 publications · 1.6K citations

    22

    h-index

  2. GG
    G. Groeseneken

    IMEC, Belgium

    37 publications · 2.5K citations

    20

    h-index

  3. KL
    K. L. Pey

    Nanyang Technological University, Singapore

    38 publications · 998 citations

    20

    h-index

  4. EY
    Ernest Y. Wu

    IBM (United States), United States

    28 publications · 1.2K citations

    20

    h-index

  5. RD
    R. Degraeve

    IMEC, Belgium

    27 publications · 2K citations

    17

    h-index

1–5 of 7.3K

Venues

  1. IEEE Transactions on Electron Devices

    217 publications · 12.5K citations

    60

    h-index

  2. Journal of Applied Physics

    181 publications · 8.5K citations

    49

    h-index

  3. Applied Physics Letters

    155 publications · 7.4K citations

    48

    h-index

  4. IEEE Electron Device Letters

    116 publications · 8.2K citations

    45

    h-index

  5. IEEE Transactions on Nuclear Science

    59 publications · 3.5K citations

    33

    h-index

1–5