T. Wosiński

Identification of AsGa antisites in plastically deformed GaAs

E. R. Weber, H. Ennen, U. Kaufmann et al. · Journal of Applied Physics · 1982 · 386 citations

Materials Science, Semiconductors, Semiconductor Technology +12

Evidence for the electron traps at dislocations in GaAs crystals

T. Wosiński · Journal of Applied Physics · 1989 · 187 citations

Semiconductors, Ed1 Traps, Gaas Crystals +13

Recent advances in defect-selective etching of GaN

J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière et al. · Journal of Crystal Growth · 2000 · 133 citations

Electrical Engineering, Engineering, Applied Physics +4

Defect-selective etching of GaN in a modified molten bases system

G. Kamler, J.L. Weyher, I. Grzegory et al. · Journal of Crystal Growth · 2002 · 99 citations

Materials Science, Materials Engineering, Electrical Engineering +8

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

M. Albrecht, H. P. Strunk, J.L. Weyher et al. · Journal of Applied Physics · 2002 · 89 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16