T. Wosiński - Concepedia

Author

T. Wosiński

Also Known As

T Wosinski, T Wosiński, T. WOSINSKI, T. WOSIŃSKI, T. Wosinski, T. Wosiński, Tadeusz WOSINSKI, Tadeusz Wosinski, Tadeusz Wosiński, Wosinski, T.

153

Publications

1.9K

Citations

H-Index

Concepts

All Affiliations

Polish Academy of Sciences Institute of Physics Institute of High Pressure Physics Lund University Radboud University Nijmegen

About

T. Wosiński is an author at Polish Academy of Sciences specializing in applied physics, engineering, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	19	32	1.5K
2	Engineering	18	30	1.4K
3	Electrical Engineering	10	10	363
4	Materials Engineering	5	5	163
5	Natural Sciences	3	3	41

T. Wosiński

Publications

1.6K

Citations

H-Index

Page 1

	Year	Citations
Identification of AsGa antisites in plastically deformed GaAs E. R. Weber, H. Ennen, U. Kaufmann, Journal of Applied Physics Materials ScienceSemiconductorsSemiconductor TechnologyEngineeringDislocation Interaction	1982	386
Evidence for the electron traps at dislocations in GaAs crystals T. Wosiński Journal of Applied Physics SemiconductorsEd1 TrapsGaas CrystalsSemiconductor TechnologyEngineering	1989	187
Recent advances in defect-selective etching of GaN J.L. Weyher, Paul D. Brown, Jean‐Luc Rouvière, Journal of Crystal Growth Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2000	133
Defect-selective etching of GaN in a modified molten bases system G. Kamler, J.L. Weyher, I. Grzegory, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	99
Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope M. Albrecht, H. P. Strunk, J.L. Weyher, Journal of Applied Physics Wide-bandgap SemiconductorOptical MaterialsEngineeringCarrier RecombinationSemiconductor Nanostructures	2002	89
Raman and cathodoluminescence study of dislocations in GaN Huaping Lei, Hartmut S. Leipner, J. Schreiber, Journal of Applied Physics Materials SciencePhotoluminescenceEngineeringDislocation InteractionCrystalline Defects	2002	59
Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy J.L. Weyher, M. Albrecht, T. Wosiński, Materials Science and Engineering B Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionTransmission Electron Microscopy	2001	51
Band structure evolution and the origin of magnetism in (Ga,Mn)As: From paramagnetic through superparamagnetic to ferromagnetic phase O. Yastrubchak, J. Z. Domagała, R. Jakieła, Physical review. B./Physical review. B	2018	32
Arsenic antisite defects as the main electron traps in plastically deformed GaAs T. Wosiński, A. Morawski, T. Figielski Applied Physics A Materials ScienceEngineeringPhysicsMain Electron TrapsApplied Physics	1983	31
Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures O. Yastrubchak, T. Wosiński, A. Mąkοsa, Physica B Condensed Matter Multilayer HeterostructuresApplied PhysicsCapture KineticsPhysics	2001	31

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