G. Kamler - Concepedia

Author

G. Kamler

Institute of High Pressure Physics ORCID

Also Known As

G Kamler, G. Kamler, Grzegorz Kamler

Publications

1.2K

Citations

H-Index

Concepts

All Affiliations

Institute of High Pressure Physics Polish Academy of Sciences TopGaN (Poland)Warsaw University of Technology Radboud University Nijmegen

About

G. Kamler is an author at Institute of High Pressure Physics specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Applied Physics	19	32	978
2	Engineering	18	30	918
3	Materials Science	15	19	602
4	Electrical Engineering	12	14	422
5	Materials Engineering	12	13	444

G. Kamler

Publications

Citations

H-Index

Page 1

	Year	Citations
Raman scattering study of Ga1−xMnxN crystals W. Gębicki, J. Strzeszewski, G. Kamler, Applied Physics Letters Materials ScienceEngineeringPhysicsCrystal MaterialOptical Properties	2000	99
Defect-selective etching of GaN in a modified molten bases system G. Kamler, J.L. Weyher, I. Grzegory, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringWide-bandgap SemiconductorEngineering	2002	99
Deposition of thick GaN layers by HVPE on the pressure grown GaN substrates B. Łucznik, B. Pastuszka, I. Grzegory, Journal of Crystal Growth Materials EngineeringWide-bandgap SemiconductorElectrical EngineeringEngineeringThick Gan Layers	2005	70
Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik, Applied Physics Express Materials EngineeringMaterials ScienceEpitaxial GrowthEngineeringCrystal Growth Technology	2013	61
Bulk GaN single-crystals growth G. Kamler, Janusz Zachara, Sławomir Podsiadło, Journal of Crystal Growth Categoryiii-v SemiconductorApplied PhysicsGan Power Device	2000	42
High power blue–violet InGaN laser diodes grown on bulk GaN substrates by plasma-assisted molecular beam epitaxy C. Skierbiszewski, P. Perlin, I. Grzegory, Semiconductor Science and Technology EngineeringLaser ApplicationsLaser MaterialBulk GanOptoelectronic Devices	2005	42
The influence of lattice parameter variation on microstructure of GaN single crystals M. Kryśko, M. Sarzyński, J. Z. Domagała, Journal of Alloys and Compounds Materials ScienceLattice Parameter VariationWide-bandgap SemiconductorEngineeringPhysics	2005	41
Vertical GaN junction barrier Schottky diodes with near-ideal performance using Mg implantation activated by ultra-high-pressure annealing Dolar Khachariya, Shane Stein, Will Mecouch, Applied Physics Express Wide-bandgap SemiconductorElectrical EngineeringElectronic DevicesEngineeringNear-ideal Performance	2022	35
Multi feed seed (MFS) high pressure crystallization of 1–2in GaN Michał Boćkowski, I. Grzegory, B. Łucznik, Journal of Crystal Growth Materials ScienceMaterials EngineeringEngineeringCrystal Growth TechnologyApplied Physics	2011	32
Growth of bulk Ga1−xMnxN single crystals T. Szyszko, G. Kamler, B. Strojek, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringCrystal MaterialCrystal Growth Technology	2001	32

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