Applied Physics Letters · 2000 · 99 citations · 7 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsSolid State PhysicsSpectroscopyElectron-phonon InteractionsElectronic Band StructureLattice DynamicsRaman SpectroscopySemiconductor Crystal GrowthSemiconductor PhysicsGallium Nitride (Gan) MaterialsPhonon Density Of StatesPhonon DynamicsPhonon ScatteringRaman ScatteringRaman SpectraTemperature DependenceTemperature-dependent Raman Spectroscopy
Raman spectra of Ga1−xMnxN crystals grown by the resublimation method have been investigated. New bands around 300 and 667 cm−1, as well as a broad structure near 600 cm−1, not observed in undoped GaN have been found. The temperature dependence of major Raman bands has been measured. The simple model of GaN lattice dynamics has been presented, and the observed bands have been assigned to disorder-activated phonon modes, in good agreement with the calculated phonon density of states.
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Natural Sciences, Materials Engineering, Materials Science +17
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