Tomasz Sochacki

Statistics

Publications

Citations

1.4K

H-Index

Active since

2011

Affiliations

Institute of High Pressure Physics(Current)

Polish Academy of Sciences

TopGaN (Poland)

Nagoya University

Ammono (Poland)

Tomasz Sochacki is an author at Institute of High Pressure Physics specializing in materials engineering, materials science, and gallium nitride (gan) materials.

ORCID

Publications per year

2011–2023

Publications

Challenges and future perspectives in HVPE-GaN growth on ammonothermal GaN seeds

Michał Boćkowski, Małgorzata Iwińska, Mikolaj Amilusik et al. · Semiconductor Science and Technology · 2016 · 147 citations

Natural Sciences, Materials Engineering, Materials Science +17

Growth of bulk GaN crystals

Robert Kucharski, Tomasz Sochacki, B. Łucznik et al. · Journal of Applied Physics · 2020 · 138 citations

Engineering, Materials Engineering, Materials Science +15

Highly resistive C-doped hydride vapor phase epitaxy-GaN grown on ammonothermally crystallized GaN seeds

Małgorzata Iwińska, R. Piotrzkowski, E. Litwin‐Staszewska et al. · Applied Physics Express · 2016 · 72 citations

Natural Sciences, Materials Science, Physics +17

Preparation of Free-Standing GaN Substrates from Thick GaN Layers Crystallized by Hydride Vapor Phase Epitaxy on Ammonothermally Grown GaN Seeds

Tomasz Sochacki, Zachary Bryan, Mikolaj Amilusik et al. · Applied Physics Express · 2013 · 63 citations

Natural Sciences, Materials Engineering, Materials Science +17

Recent progress in basic ammonothermal GaN crystal growth

Karolina Grabiańska, Robert Kucharski, A. Puchalski et al. · Journal of Crystal Growth · 2020 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +13

1–5 of 45