H. P. Strunk

Defect structure of epitaxial GaN films determined by transmission electron microscopy and triple-axis X-ray diffractometry

T. Metzger, R. Höpler, E. Born et al. · Philosophical magazine. A/Philosophical magazine. A. Physics of condensed matter. Structure, defects and mechanical properties · 1998 · 547 citations

Materials Science, Dislocation Densities, Electrical Engineering +14

Carrier recombination at single dislocations in GaN measured by cathodoluminescence in a transmission electron microscope

M. Albrecht, H. P. Strunk, J.L. Weyher et al. · Journal of Applied Physics · 2002 · 89 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +16

Simultaneous experimental evaluation of In and N concentrations in InGaAsN quantum wells

Vincenzo Grillo, M. Albrecht, T. Remmele et al. · Journal of Applied Physics · 2001 · 66 citations

Quantum Science, Simultaneous Experimental Evaluation, Independent Determination +14

Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

J.L. Weyher, M. Albrecht, T. Wosiński et al. · Materials Science and Engineering B · 2001 · 51 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +7

Interfacial Energies Providing a Driving Force for Ge/Si Heteroepitaxy

P.O. Hansson, M. Albrecht, W. Dorsch et al. · Physical Review Letters · 1994 · 48 citations

Materials Engineering, Materials Science, Ge Layers +13