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Study of individual grown-in and indentation-induced dislocations in GaN by defect-selective etching and transmission electron microscopy

Materials ScienceWide-bandgap SemiconductorEngineeringDislocation InteractionTransmission Electron MicroscopyApplied PhysicsAluminum Gallium NitrideDefect-selective EtchingGan Power DeviceIndentation-induced Dislocations