T. Remmele

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

P. Kandaswamy, F. Guillot, E. Bellet‐Amalric et al. · Journal of Applied Physics · 2008 · 190 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +22

Epitaxial stabilization of pseudomorphic α-Ga₂O₃on sapphire (0001)

Robert Schewski, G. Wagner, M. Baldini et al. · Applied Physics Express · 2014 · 139 citations

Materials Science, Oxide Heterostructures, Epitaxial Stabilization +14

Evolution of planar defects during homoepitaxial growth of <i>β</i>-Ga2O3 layers on (100) substrates—A quantitative model

Robert Schewski, M. Baldini, K. Irmscher et al. · Journal of Applied Physics · 2016 · 125 citations · Full text

Materials Science, Oxide Heterostructures, Engineering +15

Strain Induced Deep Electronic States around Threading Dislocations in GaN

L. Lymperakis, Jörg Neugebauer, M. Albrecht et al. · Physical Review Letters · 2004 · 118 citations

Materials Science, Wide-bandgap Semiconductor, Engineering +13

Effect of annealing on the In and N distribution in InGaAsN quantum wells

M. Albrecht, Vincenzo Grillo, T. Remmele et al. · Applied Physics Letters · 2002 · 97 citations

Semiconductors, Quantum Science, Electrical Engineering +15