F. Guillot

GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance

P. Kandaswamy, F. Guillot, E. Bellet‐Amalric et al. · Journal of Applied Physics · 2008 · 190 citations

Wide-bandgap Semiconductor, Aluminium Nitride, Optical Materials +22

Near infrared quantum cascade detector in GaN∕AlGaN∕AlN heterostructures

Alon Vardi, G. Bahir, F. Guillot et al. · Applied Physics Letters · 2008 · 135 citations

Aluminium Nitride, Quantum Science, Photonics +15

Si-doped GaN∕AlN quantum dot superlattices for optoelectronics at telecommunication wavelengths

F. Guillot, E. Bellet‐Amalric, E. Monroy et al. · Journal of Applied Physics · 2006 · 81 citations

Engineering, Telecommunication Wavelengths, Optoelectronic Devices +19

Room temperature demonstration of GaN∕AlN quantum dot intraband infrared photodetector at fiber-optics communication wavelength

Alon Vardi, N. Akopian, G. Bahir et al. · Applied Physics Letters · 2006 · 79 citations

Quantum Photonics, Engineering, Optical Transmission System +24

High-quality AlN∕GaN-superlattice structures for the fabrication of narrow-band 1.4 μm photovoltaic intersubband detectors

Daniel Hofstetter, Esther Baumann, Fabrizio R. Giorgetta et al. · Applied Physics Letters · 2006 · 62 citations

Engineering, Narrow-band 1.4, Optoelectronic Devices +17