Monolithic VCSEL with InGaAsN active region emittingat 1.28 µmand CW output power exceeding 500 µW at room temperature

Abstract

The authors report on electrically pumped MBE-grown VCSELs on GaAs substrate with an InGaAsN active region, emitting above 1.28 µm with record characteristics. The CW output power at room temperature exceeds 500 µW with an initial slope efficiency of 0.17 W/A.