B. Jobst

Determination of the chemical composition of distorted InGaN/GaN heterostructures from x-ray diffraction data

M. Schuster, P O Gervais, B. Jobst et al. · Journal of Physics D Applied Physics · 1999 · 134 citations

Wide-bandgap Semiconductor, Engineering, Chemical Composition +17

Correlation between Optical Properties and Crystallite Size in Porous Silicon

Volker Lehmann, B. Jobst, T. Muschik et al. · Japanese Journal of Applied Physics · 1993 · 103 citations

Materials Science, Optical Materials, Quantum Size Effect +12

Preparation and properties of dc-sputtered IrO2 and Ir thin films for oxygen barrier applications in advanced memory technology

C. U. Pinnow, I. Kasko, C. Dehm et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2001 · 42 citations

Iro 2, Engineering, Emerging Memory Technology +17

Leakage currents at crystallites in ZrAlxOy thin films measured by conductive atomic-force microscopy

Oliver Bierwagen, Lutz Geelhaar, X. Gay et al. · Applied Physics Letters · 2007 · 34 citations

Engineering, Leakage Spots, Ferroelectric Application +17

Effect of surface orientation on GaInAsP material composition in MOMBE (CBE)

H. Heinecke, B. Baur, R. Höger et al. · Journal of Crystal Growth · 1992 · 34 citations

Materials Science, Engineering, Material Property +6