R. Höger

Band offset in elastically strained InGaAs/GaAs multiple quantum wells determined by optical absorption and electronic Raman scattering

J.P. Reithmaier, R. Höger, H. Riechert et al. · Applied Physics Letters · 1990 · 90 citations

Categoryquantum Electronics, Engineering, Optical Absorption +16

Growth of high purity InP by metalorganic MBE (CBE)

H. Heinecke, B. Baur, R. Höger et al. · Journal of Crystal Growth · 1990 · 67 citations

Materials Engineering, Materials Science, Engineering +2

Experimental evidence for the transition from two- to three-dimensional behavior of excitons in quantum-well structures

J.P. Reithmaier, R. Höger, H. Riechert · Physical review. B, Condensed matter · 1991 · 43 citations

Optical Materials, Engineering, Excitonic Recombination +20

Short pulse physics of quantum well structures

E. O. Göbel, J. Kühl, R. Höger · Journal of Luminescence · 1985 · 41 citations

Quantum Science, Engineering, Quantum Computing +4

Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE

H. Heinecke, B. Baur, R. Schimpe et al. · Journal of Crystal Growth · 1992 · 36 citations

Materials Science, Engineering, Selective Area Epitaxy +4