Selective area epitaxy of InP/GaInAsP heterostructures by MOMBE

Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE

Oliver Kayser · Journal of Crystal Growth · 1991 · 173 citations

Natural Sciences, Materials Engineering, Materials Science +5

Emergence of a periodic mode in the so-called turbulent region in a circular Couette flow

B. Perrin · Journal de Physique Lettres · 1982 · 149 citations · Full text

Natural Sciences, Aerospace Engineering, Aerodynamics +10

Selective growth of GaAs in the MOMBE and MOCVD systems

H. Heinecke, A. Brauers, F. Grafahrend et al. · Journal of Crystal Growth · 1986 · 130 citations

Engineering, Materials Engineering, Materials Science +12

Kinetics of GaAs growth by low pressure MO-CVD

H. Heinecke, E. Veuhoff, N. Pütz et al. · Journal of Electronic Materials · 1984 · 81 citations

Engineering, Materials Engineering, Materials Science +12

A new method for the growth of GaAs epilayer at low H2 pressure

J.P. Duchemin, Muriel Bonnet, F. Koelsch et al. · Journal of Crystal Growth · 1978 · 77 citations

Engineering, Materials Engineering, Materials Science +14