Concepedia
Journal of Crystal Growth · 1978 · 77 citations · 16 references
Materials EngineeringIi-vi SemiconductorLow H2 PressureEngineeringPhysicsCrystal Growth TechnologyCompound SemiconductorApplied PhysicsGaas EpilayerMolecular Beam EpitaxyEpitaxial GrowthOptoelectronicsNew Method
16
The Use of Metal-Organics in the Preparation of Semiconductor Materials
H. M. Manasevit, W. I. Simpson · Journal of The Electrochemical Society · 1969 · 359 citations
Engineering, Organic Electronics, Semiconductor Materials +16
The Use of Metalorganics in the Preparation of Semiconductor Materials
H. M. Manasevit, F. M. Erdmann, W. I. Simpson · Journal of The Electrochemical Society · 1971 · 296 citations
Materials Engineering, Materials Science, Engineering +5
The preparation of high purity gallium arsenide by vapour phase epitaxial growth
J.R. Knight, D. Effer, P. R. Evans · Solid-State Electronics · 1965 · 146 citations
Materials Science, Materials Engineering, Engineering +6
Kinetics of Silicon Growth under Low Hydrogen Pressure
M. Jean‐Pascal Duchemin, Muriel Bonnet, Magali Koelsch · Journal of The Electrochemical Society · 1978 · 127 citations
Engineering, Silicon Deposition, Chemical Deposition +16
Device quality epitaxial gallium arsenide grown by the metal alkyl-hydride technique
S. J. Bass · Journal of Crystal Growth · 1975 · 112 citations
Materials Engineering, Electrical Engineering, Engineering +6