Selective Area Epitaxy
Selective Area Epitaxy is a thin-film growth technique in which epitaxial layers are selectively deposited on exposed semiconductor surfaces through patterned dielectric masks, enabling spatially controlled nucleation and growth while suppressing deposition on masked regions.
331
Publications
12.3K
Citations
1.4K
Authors
278
Institutions
Publications per year
2017–2026
67
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Sae
Parents
331
Extreme selectivity in the lift-off of epitaxial GaAs films
Eli Yablonovitch, T.J. Gmitter, J. P. Harbison et al. · Applied Physics Letters · 1987 · 806 citations · Full text
Control of InAs Nanowire Growth Directions on Si
Katsuhiro Tomioka, Junichi Motohisa, Shinjiro Hara et al. · Nano Letters · 2008 · 349 citations
Natural Sciences, Materials Engineering, Materials Science +16
Anisotropic epitaxial lateral growth in GaN selective area epitaxy
D. Kapolnek, S. Keller, R. Vetury et al. · Applied Physics Letters · 1997 · 302 citations
Katsumi Kishino, Hiroto Sekiguchi, Akihiko Kikuchi · Journal of Crystal Growth · 2008 · 272 citations
1–5 of 331
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278

Hokkaido University
Sapporo, Japan
16 h-index
97 publications
5.8K citations
IMEC
Leuven, Belgium
12 h-index
104 publications
3.6K citations

Centre National de la Recherche Scientifique
Paris, France
12 h-index
63 publications
1.4K citations
Japan Science and Technology Agency
Tokyo, Japan
11 h-index
23 publications
1.9K citations
University of Illinois Urbana-Champaign
Urbana, United States
11 h-index
45 publications
1.3K citations

Australian National University
Canberra, Australia
11 h-index
74 publications
4.9K citations
KU Leuven
Leuven, Belgium
11 h-index
30 publications
973 citations
The University of Tokyo
Tokyo, Japan
11 h-index
40 publications
816 citations
1–8 of 278
55 publications · 2.9K citations
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66 publications · 1.8K citations
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JJAP · 24 publications · 663 citations
16
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18 publications · 1.5K citations
16
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16 publications · 510 citations
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