Selective Area Epitaxy

Selective Area Epitaxy is a thin-film growth technique in which epitaxial layers are selectively deposited on exposed semiconductor surfaces through patterned dielectric masks, enabling spatially controlled nucleation and growth while suppressing deposition on masked regions.

331

Publications

12.3K

Citations

1.4K

Authors

278

Institutions

Publications per year

2017–2026

67

Variants

Sae

Authors

1.4K

  1. TF
    Takashi Fukui

    Hokkaido University, Japan

    19 publications · 1.3K citations

    16

    h-index

  2. JM
    Junichi Motohisa

    Hokkaido University, Japan

    15 publications · 1.2K citations

    14

    h-index

  3. SH
    Shinjiro Hara

    Hokkaido University, Japan

    12 publications · 778 citations

    12

    h-index

  4. CJ
    C. Jagadish

    Australian National University, Australia

    11 publications · 616 citations

    11

    h-index

  5. HH
    Hark Hoe Tan

    Australian National University, Australia

    10 publications · 596 citations

    10

    h-index

1–5 of 1.4K

Venues

  1. Applied Physics Letters

    55 publications · 2.9K citations

    26

    h-index

  2. Journal of Crystal Growth

    66 publications · 1.8K citations

    24

    h-index

  3. Japanese Journal of Applied Physics

    JJAP · 24 publications · 663 citations

    16

    h-index

  4. Nano Letters

    18 publications · 1.5K citations

    16

    h-index

  5. Journal of Applied Physics

    16 publications · 510 citations

    13

    h-index

1–5