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Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Materials ScienceWide-bandgap SemiconductorElectrical EngineeringEngineeringNanomaterialsNanotechnologyApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideTi-mask Selective-area Growth