Improved Ti-mask selective-area growth (SAG) by rf-plasma-assisted molecular beam epitaxy demonstrating extremely uniform GaN nanocolumn arrays

Synthesis of Gallium Nitride Nanorods Through a Carbon Nanotube-Confined Reaction

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Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase Epitaxy

Akira Usui, Haruo Sunakawa, Akira Sakai et al. · Japanese Journal of Applied Physics · 1997 · 929 citations

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High-Brightness Light Emitting Diodes Using Dislocation-Free Indium Gallium Nitride/Gallium Nitride Multiquantum-Well Nanorod Arrays

Hwa-Mok Kim, Yong‐Hoon Cho, Hosang Lee et al. · Nano Letters · 2004 · 561 citations

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The Controlled Growth of GaN Nanowires

S. D. Hersee, Xinyu Sun, Xin Wang · Nano Letters · 2006 · 560 citations

Natural Sciences, Materials Engineering, Materials Science +17

InGaN/GaN/AlGaN-Based Laser Diodes with Modulation-Doped Strained-Layer Superlattices

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1997 · 470 citations

Engineering, Electrical Engineering, Materials Science +17