G. Jaschke

Low threshold InGaAsN/GaAs lasers beyond 1500nm

G. Jaschke, R. Averbeck, Lutz Geelhaar et al. · Journal of Crystal Growth · 2005 · 103 citations

Photonics, Engineering, Laser Science +5

Conductivity and Charge Trapping After Electrical Stress in Amorphous and Polycrystalline $\hbox{Al}_{2}\hbox{O}_{3}\hbox{-Based}$ Devices Studied With AFM-Related Techniques

Mario Lanza, M. Porti, X. Aymerich et al. · IEEE Transactions on Nanotechnology · 2010 · 36 citations

Engineering, Emerging Memory Technology, Si Diffusion +23

Influence of the manufacturing process on the electrical properties of thin (<4nm) Hafnium based high-k stacks observed with CAFM

Mario Lanza, M. Porti, M. Nafrı́a et al. · Microelectronics Reliability · 2007 · 30 citations

Materials Engineering, Materials Science, Electrical Engineering +10

Crystallization and silicon diffusion nanoscale effects on the electrical properties of Al2O3 based devices

Mario Lanza, M. Porti, M. Nafrı́a et al. · Microelectronic Engineering · 2009 · 26 citations

Materials Science, Aluminium Nitride, Electrical Engineering +9

Influence of structural nonuniformity and nonradiative processes on the luminescence efficiency of InGaAsN quantum wells

Lutz Geelhaar, M. Galluppi, G. Jaschke et al. · Applied Physics Letters · 2005 · 24 citations

Materials Science, Luminescence Decay Times, Engineering +12