Concepedia

M. Nafrı́a

MN

Statistics

Publications

101

Citations

4.2K

H-Index

33

Active since

1993

Affiliations

Universitat Autònoma de Barcelona(Current)

IMEC

Institut de Microelectrònica de Barcelona

KU Leuven

Instituto de Microelectrónica de Sevilla

M. Nafrı́a is an author at Universitat Autònoma de Barcelona specializing in materials science, engineering, and semiconductor devices.

ORCID

Publications per year

1993–2021

101

Publications

101

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 470 citations · Full text

, , +17

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Mario Lanza, K. Zhang, M. Porti et al. · Applied Physics Letters · 2012 · 197 citations · Full text

, , +17

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Mario Lanza, G. Bersuker, M. Porti et al. · Applied Physics Letters · 2012 · 173 citations · Full text

, , +17

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, Luca Vandelli et al. · Solid-State Electronics · 2011 · 148 citations · Full text

, , +14

Grain boundary mediated leakage current in polycrystalline HfO2 films

Keith P. McKenna, Alexander L. Shluger, V. Iglesias et al. · Microelectronic Engineering · 2011 · 146 citations

, , +11

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