M. Porti

Metal oxide resistive memory switching mechanism based on conductive filament properties

G. Bersuker, D. C. Gilmer, Dmitry Veksler et al. · Journal of Applied Physics · 2011 · 468 citations · Full text

Materials Science, Materials Engineering, Electrical Engineering +15

Grain boundaries as preferential sites for resistive switching in the HfO2 resistive random access memory structures

Mario Lanza, K. Zhang, M. Porti et al. · Applied Physics Letters · 2012 · 196 citations · Full text

Non-volatile Memory, Engineering, Preferential Sites +22

Resistive switching in hafnium dioxide layers: Local phenomenon at grain boundaries

Mario Lanza, G. Bersuker, M. Porti et al. · Applied Physics Letters · 2012 · 172 citations · Full text

Local Phenomenon, Engineering, Microscopy +19

Grain boundary-driven leakage path formation in HfO2 dielectrics

G. Bersuker, J. Yum, Luca Vandelli et al. · Solid-State Electronics · 2011 · 143 citations · Full text

Engineering, Physics, Applied Physics +6

Grain boundary mediated leakage current in polycrystalline HfO2 films

Keith P. McKenna, Alexander L. Shluger, V. Iglesias et al. · Microelectronic Engineering · 2011 · 137 citations

Materials Science, Epitaxial Growth, Engineering +5