Karl Ludwig

Phase separation and ordering in InGaN alloys grown by molecular beam epitaxy

D. Doppalapudi, Soumendra N. Basu, Karl Ludwig et al. · Journal of Applied Physics · 1998 · 227 citations · Full text

Materials Engineering, Materials Science, Epitaxial Growth +13

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates

Ting Lei, Karl Ludwig, T. D. Moustakas · Journal of Applied Physics · 1993 · 223 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16

Mass Redistribution Causes the Structural Richness of Ion-Irradiated Surfaces

Charbel S. Madi, Eitan Anzenberg, Karl Ludwig et al. · Physical Review Letters · 2011 · 169 citations

Materials Science, Engineering, Physics +15

Real-time x-ray studies of Mo-seeded Si nanodot formation during ion bombardment

Ahmet S. Özcan, Yiyi Wang, Karl Ludwig et al. · Applied Physics Letters · 2005 · 134 citations

Engineering, Silicon On Insulator, Ion Implantation +21

Long range order in AlxGa1−xN films grown by molecular beam epitaxy

D. Korakakis, Karl Ludwig, T. D. Moustakas · Applied Physics Letters · 1997 · 132 citations

Materials Engineering, Materials Science, Alxga1−xn Films +14