GaAlAs-GaAs ballistic hetero-junction bipolar transistor

Abstract

A novel heterojunction bipolar transistor structure is proposed using the ballistic electron motion concept. Electrons which surmount the conduction band spike barrier (<ΔEΓ−L) are accelerated into the base at higher velocities than the diffusion velocity. Calculations derived from a drift-diffusion emission model illustrate the trade-off possible between the injection efficiency and the electron velocity through the base.