J. F. Bresse

In2O3 : (Sn) and SnO2 : (F) films - application to solar energy conversion part II — Electrical and optical properties

J.-C. Manifacier, L. Szepessy, J. F. Bresse et al. · Materials Research Bulletin · 1979 · 169 citations

Materials Science, Optical Materials, Engineering +12

In2O3:(Sn) and SnO2:(F) films — Application to solar energy conversion; part 1 — Preparation and characterization

J.-C. Manifacier, L. Szepessy, J. F. Bresse et al. · Materials Research Bulletin · 1979 · 102 citations

Materials Science, Chemical Engineering, Part 1 +13

Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

J. Etrillard, P. Ossart, G. Patriarche et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 52 citations

Engineering, Sidewall Damage, Plasma Processing +18

Comprehensive study of AuMn <i>p</i>-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

C. Dubon‐Chevallier, M. Gauneau, J. F. Bresse et al. · Journal of Applied Physics · 1986 · 34 citations

Semiconductors, Materials Science, Electrical Engineering +15

Be incorporation in heavily doped molecular beam epitaxy grown GaAs: Evidence of nonradiative behavior by cathodoluminescence and electron acoustic measurements

J. F. Bresse, A. C. Papadopoulo · Applied Physics Letters · 1987 · 20 citations

Engineering, Electron Acoustic Intensity, Semiconductors +16