P. Ossart

Anisotropic etching of InP with low sidewall and surface induced damage in inductively coupled plasma etching using SiCl4

J. Etrillard, P. Ossart, G. Patriarche et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1997 · 52 citations

Engineering, Sidewall Damage, Plasma Processing +18

Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

J. Etrillard, F. Héliot, P. Ossart et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 39 citations

Ch4/h2/o2 Gas Mixture, Engineering, Chemistry +18

The growth and characterization of device quality InP/ Ga1-xinxasyp1-y double heterostructures by atmospheric-pressure MOVPE using trimethylindium

A. Mircéa, R. Mellet, B. Rose et al. · Journal of Electronic Materials · 1986 · 35 citations

Materials Science, Ii-vi Semiconductor, Engineering +4

Influence of boron on tin induced interdiffusion in GaAs-Ga0.72Al0.28As superlattices

E. V. K. Rao, P. Ossart, F. Alexandre et al. · Applied Physics Letters · 1987 · 27 citations

Materials Science, Gaas-ga0.72al0.28as Superlattices, Boron Nitride +12

MOCVD growth and characterization by Raman scattering, x-ray diffraction and Auger spectroscopy of short period GaAs/AlAs and GaAs/Ga1−xAlxAs superlattices

R. Azoulay, B. Jusserand, G. Le Roux et al. · Journal of Crystal Growth · 1986 · 23 citations

Materials Science, Auger Spectroscopy, Engineering +7