F. Héliot

Sidewall and surface induced damage comparison between reactive ion etching and inductive plasma etching of InP using a CH4/H2/O2 gas mixture

J. Etrillard, F. Héliot, P. Ossart et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1996 · 39 citations

Ch4/h2/o2 Gas Mixture, Engineering, Chemistry +18

Diffused epitaxial GaAlAs-GaAs heterojunction bipolar transistor for high-frequency operation

D. Ankri, A. Scavennec, C. Besombes et al. · Applied Physics Letters · 1982 · 33 citations

Transition Frequencies, Semiconductor Technology, Electrical Engineering +10

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

J.L. Benchimol, F. Alexandre, C. Dubon‐Chevallier et al. · Electronics Letters · 1992 · 31 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

D. Caffin, A.M. Duchenois, F. Héliot et al. · IEEE Transactions on Electron Devices · 1997 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Innovative passivated heterojunction bipolar transistor grown by CBE

C. Dubon‐Chevallier, F. Alexandre, J.L. Benchimol et al. · Electronics Letters · 1992 · 15 citations

Semiconductor Technology, Gaalas Layer, Electrical Engineering +10