A.M. Duchenois

Base-collector leakage currents in InP/InGaAs double heterojunction bipolar transistors

D. Caffin, A.M. Duchenois, F. Héliot et al. · IEEE Transactions on Electron Devices · 1997 · 23 citations

Materials Engineering, Materials Science, Electrical Engineering +13

Passivation of InP-based HBTs for high bit rate circuit applications

D. Caffin, L. Bricard, J.L. Courant et al. · 2002 · 16 citations

Wide-bandgap Semiconductor, Engineering, Silicon Oxide +16

InP/InGaAs double-HBT technology for high bit-ratecommunication circuits

D. Caffin, Mathilde Bouché, Mounir Meghelli et al. · Electronics Letters · 1997 · 15 citations

InP DHBT technology and design methodology for high-bit-rate optical communications circuits

Paulo André, J.L. Benchimol, P. Desrousseaux et al. · IEEE Journal of Solid-State Circuits · 1998 · 15 citations

Optical Materials, Engineering, Optical Transmission System +18

Reproducible low-resistivity AuMn ohmic contact for <i>p</i> -type GaAs

C. Dubon‐Chevallier, A.M. Duchenois, J. F. Bresse et al. · Electronics Letters · 1985 · 12 citations