C. Dubon‐Chevallier

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

J.F. Palmier, C. Minot, J.L. Lievin et al. · Applied Physics Letters · 1986 · 48 citations

Superconducting Material, Electrical Engineering, Semiconductor Device +13

Comprehensive study of AuMn <i>p</i>-type ohmic contact for GaAs/GaAlAs heterojunction bipolar transistors

C. Dubon‐Chevallier, M. Gauneau, J. F. Bresse et al. · Journal of Applied Physics · 1986 · 34 citations

Semiconductors, Materials Science, Electrical Engineering +15

Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

F. Alexandre, J.L. Benchimol, J. Dangla et al. · Electronics Letters · 1990 · 33 citations

Semiconductors, Electrical Engineering, Electronic Devices +9

Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

N. Jourdan, F. Alexandre, C. Dubon‐Chevallier et al. · IEEE Transactions on Electron Devices · 1992 · 33 citations

Wide-bandgap Semiconductor, High Thermal Stability, Electrical Engineering +15

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

J.L. Benchimol, F. Alexandre, C. Dubon‐Chevallier et al. · Electronics Letters · 1992 · 31 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +11