Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

Abstract

The first demonstration of a GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy is reported. A common-emitter current gain of 30 at a current density of 110 A/cm2 is obtained for a beryllium base doping as high as 8 × 1019 cm−3. The base sheet resistance of 140 Ω/□ is among the lowest reported vulues.