Concepedia

J. Dangla

JD

Statistics

Publications

12

Citations

310

H-Index

11

Active since

1986

Affiliations

Orange (France)(Current)

J. Dangla is an author at Orange (France) specializing in applied physics, electrical engineering, and engineering.

Top concepts

Publications per year

1986–2003

12

Publications

12

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

J.F. Palmier, C. Minot, J.L. Lievin et al. · Applied Physics Letters · 1986 · 48 citations

, , +13

Heavily doped base GaInP/GaAs heterojunction bipolar transistor grown by chemical beam epitaxy

F. Alexandre, J.L. Benchimol, J. Dangla et al. · Electronics Letters · 1990 · 33 citations

, , +9

Ga<sub>0.72</sub>Al<sub>0.28</sub>As/Ga<sub>0.99</sub>Be<sub>0.01</sub>As heterojunction bipolar transistor grown by molecular beam epitaxy

J.L. Lievin, C. Dubon-Chevall, F. Alexandre et al. · IEEE Electron Device Letters · 1986 · 33 citations

, , +13

Heavily doped GaAs(Be)/GaAlAs HBTs grown by MBE with high device performances and high thermal stability

N. Jourdan, F. Alexandre, C. Dubon‐Chevallier et al. · IEEE Transactions on Electron Devices · 1992 · 33 citations

, , +15

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

J.L. Benchimol, F. Alexandre, C. Dubon‐Chevallier et al. · Electronics Letters · 1992 · 31 citations

, , +11

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