Concepedia

J.L. Lievin

JL

10

Publications

269

Citations

10

H-Index

1985

Active since

Affiliations

CEA Marcoule(Current)

Alstom (France)

3S Photonics (France)

Massachusetts Institute of Technology

J.L. Lievin is an author at CEA Marcoule specializing in engineering, applied physics, and optoelectronics.

Top concepts

EngineeringApplied PhysicsOptoelectronicsMaterial ScienceElectrical EngineeringPhysicsMicroelectronicsOptical PropertiesPhotonicsSemiconductors

Publications per year

1985–1992

10

Publications

10

Ultra-high doping levels of GaAs with beryllium by molecular beam epitaxy

J.L. Lievin, F. Alexandre · Electronics Letters · 1985 · 48 citations

Semiconductors, Materials Science, Electrical Engineering +15

Observation of Bloch conduction perpendicular to interfaces in a superlattice bipolar transistor

J.F. Palmier, C. Minot, J.L. Lievin et al. · Applied Physics Letters · 1986 · 48 citations

Superconducting Material, Electrical Engineering, Semiconductor Device +13

Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: Application to pseudomorphic heterostructures

J.L. Lievin, Clifton G. Fonstad · Applied Physics Letters · 1987 · 34 citations

Materials Science, Epitaxial Growth, Engineering +14

Ga<sub>0.72</sub>Al<sub>0.28</sub>As/Ga<sub>0.99</sub>Be<sub>0.01</sub>As heterojunction bipolar transistor grown by molecular beam epitaxy

J.L. Lievin, C. Dubon-Chevall, F. Alexandre et al. · IEEE Electron Device Letters · 1986 · 33 citations

Semiconductors, Semiconductor Technology, Electrical Engineering +13

Growth of GaAs, AlGaAs, and InGaAs on (111)<i>B</i> GaAs by molecular-beam epitaxy

K. Elcess, J.L. Lievin, C.G. Fonstad · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 32 citations

Rows per page

1–5 of 10