Concepedia

C.G. Fonstad

CF

14

Publications

239

Citations

11

H-Index

1975

Active since

Affiliations

Massachusetts Institute of Technology(Current)

Xerox (United States)

Los Alamos National Laboratory

University at Buffalo, State University of New York

C.G. Fonstad is an author at Massachusetts Institute of Technology specializing in applied physics, engineering, and optoelectronics.

Top concepts

EngineeringApplied PhysicsOptoelectronicsElectrical EngineeringPhysicsMaterial ScienceOptoelectronic DevicesOptical MaterialsOptical PropertiesPhotonics

Publications per year

1975–1999

14

Publications

14

Growth of GaAs, AlGaAs, and InGaAs on (111)<i>B</i> GaAs by molecular-beam epitaxy

K. Elcess, J.L. Lievin, C.G. Fonstad · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1988 · 32 citations

Growth and characterization of (111) oriented GaInAs/GaAs strained-layer superlattices

J. G. Beery, B. Laurich, C.J. Maggiore et al. · Applied Physics Letters · 1989 · 25 citations

Materials Science, Wide-bandgap Semiconductor, Ii-vi Semiconductor +11

Performance comparison of heterojunction phototransistors, p-i-n FET's, and APD-FET's for optical fiber communication systems

K. Tabatabaie‐Alavi, C.G. Fonstad · IEEE Journal of Quantum Electronics · 1981 · 25 citations

Optical Materials, Engineering, Optical Transmission System +21

Very low resistance ohmic contacts on <i>p</i>-type InP by direct plating

K. Tabatabaie‐Alavi, Anwesha Choudhury, N. J. Slater et al. · Applied Physics Letters · 1982 · 23 citations

Materials Science, Electrical Engineering, Optical Materials +12

Electrical characteristics of Be-implanted GaAs diodes annealed with an ultrahigh power argon arc lamp

K. Tabatabaie‐Alavi, Anwesha Choudhury, H. Kanbe et al. · Applied Physics Letters · 1983 · 19 citations

Semiconductors, Be-implanted Gaas, Electrical Engineering +15

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