Concepedia

H. Kanbe

HK

25

Publications

798

Citations

18

H-Index

1976

Active since

Affiliations

NTT (Japan)(Current)

NTT Basic Research Laboratories

Musashino Academia Musicae

Massachusetts Institute of Technology

Fujitsu (Japan)

H. Kanbe is an author at NTT (Japan) specializing in engineering, applied physics, and optoelectronics.

Top concepts

EngineeringApplied PhysicsOptoelectronicsElectrical EngineeringPhotonicsOptical PropertiesPhysicsSemiconductorsOptoelectronic DevicesPhotodetectors

Publications per year

1976–1997

25

Publications

25

Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm

H. Ando, H. Kanbe, T. Kimura et al. · IEEE Journal of Quantum Electronics · 1978 · 106 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +14

New InGaAs/InP avalanche photodiode structure for the 1-1.6 &#181;m wavelength region

Nobuhiko Susa, H. Nakagome, Osamu Mikami et al. · IEEE Journal of Quantum Electronics · 1980 · 93 citations

Photonics, Electrical Engineering, Short Wavelength Optic +12

Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions

Nobuhiko Susa, H. Nakagome, H. Ando et al. · IEEE Journal of Quantum Electronics · 1981 · 54 citations

Wide-bandgap Semiconductor, Engineering, Semiconductor Materials +16

Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium

Arturo Chavez-Pirson, Hiroaki Ando, H. Saito et al. · Applied Physics Letters · 1993 · 45 citations

Optical Pumping, Photonics, Vertical Cavity Surface +13

Nonlinear absorption in n-i-p-i-MQW structures

H. Ando, H. Iwamura, H. Oohashi et al. · IEEE Journal of Quantum Electronics · 1989 · 43 citations

Wide-bandgap Semiconductor, Categoryquantum Electronics, Engineering +19

Rows per page

1–5 of 25