Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 µm

H. Ando, H. Kanbe, T. Kimura, +2

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorPhotonicsElectrical EngineeringGermanium Avalanche PhotodiodesEngineering +12

New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region

Nobuhiko Susa, H. Nakagome, Osamu Mikami, +2

IEEE Journal of Quantum Electronics

PhotonicsElectrical EngineeringShort Wavelength OpticEngineeringPhysics +10

Characteristics in InGaAs/InP avalanche photodiodes with separated absorption and multiplication regions

Nobuhiko Susa, H. Nakagome, H. Ando, +1

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorEngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductor Device +14

Polarization properties of a vertical cavity surface emitting laser using a fractional layer superlattice gain medium

Arturo Chavez-Pirson, Hiroaki Ando, H. Saito, +1

Applied Physics Letters

Optical PumpingPhotonicsVertical Cavity SurfaceAnisotropic Gain MediumEngineering +11

Nonlinear absorption in n-i-p-i-MQW structures

H. Ando, H. Iwamura, H. Oohashi, +1

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorCategoryquantum ElectronicsEngineeringCavity QedSemiconductors +17

Ionization coefficient measurement in GaAs by using multiplication noise characteristics

Hiroaki Ando, H. Kanbe

Solid-State Electronics

Electrical EngineeringEngineeringRf SemiconductorMeasurementApplied Physics +7

Silicon avalanche photodiodes with low multiplication noise and high-speed response

H. Kanbe, T. Kimura, Y. Mizushima, +1

IEEE Transactions on Electron Devices

Semiconductor TechnologyPhotonicsElectrical EngineeringEngineeringElectronic Engineering +13

Direct observation of optical anisotropy in a GaAs/AlAs quantum well wire array

H. Kanbe, Arturo Chavez-Pirson, Hiroaki Ando, +2

Applied Physics Letters

Optical MaterialsQuantum PhotonicsEngineeringOptical AbsorptionOptical Anisotropy +21

Low-temperature Zn- and Cd-diffusion profiles in InP and formation of guard ring in InP avalanche photodiodes

Hiroaki Ando, Nobuhiko Susa, H. Kanbe

IEEE Transactions on Electron Devices

Wide-bandgap SemiconductorEngineeringSemiconductorsIi-vi SemiconductorTransport Phenomena +14

InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies

Hiroaki Ando, Y. Yamauchi, H. Nakagome, +2

IEEE Journal of Quantum Electronics

Optical MaterialsEngineeringVapor-phase EpitaxiesOptoelectronic DevicesSemiconductors +16